top of page
Advance Nanotechnology Group
Department of Electrical & Computer Engineering @ NUS
Front Cover
​
A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy
​
Xuewei Feng et al.,
Advanced Electronic Materials
volume 5, no. 1900740
2019
Front Cover
​
Electronic Devices and Circuits based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
​
Lin Wang*, Li Chen* et al.,
Advanced Electronic Materials
volume 5, no. 1900393
June 2019
Front Cover
​
Complementary Black Phosphorus Nanoribbons Field-Effect Transistors and Circuits
(Invited Paper)
​
Xuewei Feng et al.,
IEEE Transactions on Electron Devices, volume 65, number 10, October 2018
​
Special Issue on 2D Materials for Electronic, Optoelectronic, and Sensor Devices
BP Nanoribbons Transistor
Cover Figure IEEE Transactions on Electron Devices 65 (2018)
Black Phosphorus Phototransistor
BP Transistor with High-k/Metal Gate
Flexible BP Inverter Circuit
2D Boolean Integrated Circuits
Large Scale Boolean NOT Gate
Boolean NAND Gate
Memtransistor Electronic Synapse
Plasmonic PD with Split Bull Eyes
bottom of page