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Advance Nanotechnology Group
Department of Electrical & Computer Engineering @ NUS
Front Cover
A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy
Xuewei Feng et al.,
Advanced Electronic Materials
volume 5, no. 1900740
2019
Front Cover
Electronic Devices and Circuits based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
Lin Wang*, Li Chen* et al.,
Advanced Electronic Materials
volume 5, no. 1900393
June 2019
Front Cover
Complementary Black Phosphorus Nanoribbons Field-Effect Transistors and Circuits
(Invited Paper)
Xuewei Feng et al.,
IEEE Transactions on Electron Devices, volume 65, number 10, October 2018
Special Issue on 2D Materials for Electronic, Optoelectronic, and Sensor Devices
BP Nanoribbons Transistor
Cover Figure IEEE Transactions on Electron Devices 65 (2018)
Black Phosphorus Phototransistor
BP Transistor with High-k/Metal Gate
Flexible BP Inverter Circuit
2D Boolean Integrated Circuits
Large Scale Boolean NOT Gate
Boolean NAND Gate
Memtransistor Electronic Synapse
Plasmonic PD with Split Bull Eyes
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