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Book Chapters

 

  1. B. Dong, L. Huang, C. Lee, and K.-W. Ang, "Black phosphorus based photodetectors," Book title: Fundamentals and Applications of Phosphorus Nanomaterials, ACS Books, ISBN13: ‍9780841236585, 135-153, 2020. [Link]

  2. L. Wang, and K.-W. Ang, "Two-dimensional materials towards future photovoltaic devices," Book title: 2D Materials for Photonic and Optoelectronic Applications, ELSEVIER, ISBN: 978-0-12-815435-9, 117-158, Oct. 2019. [Link]

  3. W. C. Tan, X. Huang, L. Huang, L. Wang, X. Feng, L. Chen, and K.-W. Ang, "Recent advances in black phosphorus and transition metal dichalcogenide-based electronic and optoelectronic devices," Book title: 2D Semiconductor Materials and Devices, ELSEVIER, ISBN: 978-0-12-816187-6, 251-312, Oct. 2019. [Link]

  4. K.-W. Ang, G.-Q. Lo, and D.-L. Kwong, “Germanium photodetector technologies for optical communication applications,” Book title: Semiconductor Technologies, INTECH, ISBN 978-953-307-080-3, 373-406, Apr. 2010. [Link]

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Journals

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2024

  1. K. Yi, W. Qin, Y. Huang, Y. Wu, S. Feng, Q. Fang, X. Cao, Y. Deng, C. Zhu, X. Zou, K.-W. Ang, T. Li, X. Wang, J. Lou, K. Lai, Z. Hu, Z. Zhang, Y. Dong, K. Kalantar-Zadeh, and Z. Liu, "Integration of high-κ native oxides of gallium
    for two-dimensional transistors,"     Nature Electronics 7 (2024)

  2. J. Huo, L. Li, H. Zheng, J. Gao, T. T. T. Tun, H. Xiang, and K.-W. Ang, "Compact Physical Implementation of Spiking Neural Network Using Ambipolar WSe2 n-type/p-type Ferroelectric Field-Effect Transistor," ACS Nano 18, (2024).

  3. J. Gao, Y.-C. Chien, L. Li, H. K. Lee, S. Samantha, B. Varghese, H. Xiang, M. Li, C. Liu, Y. Zhu, L. Chen, and K.-W. Ang, "Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing," Small 20, 2404711 (2024). [Link]

  4. Y. Shi, N. T. Duong, Y.-C. Chien, S. Li, H. Xiang, H. Zheng, and K.-W. Ang, "Switching dynamics in anti-ferroelectric transistor for multimodal reservoir computing," Advanced Functional Materials 34, 2400879 (2024).  [Link]

  5. F. Aguirre, A. Sebastian, M. l. Gallo, W. Song, T. Wang, J. J. Yang, W. Lu, M.-F. Chang, D. lelmini, Y. Yang, A. Mehonic, A. Kenyon, M. A. Villena, J. B. Roldan, Y. Wu, H.-H. Hsu, N. Raghavan, J. Sune, E. Miranda, A. Eltawil, G. Setti, K. Smagulova, K. N. Salama, O. Krestinskaya, X. Yan, K.-W. Ang, S. Jain, S. Li, O. Alharbi, S. Pazos, and M. Lanza, "Hardware implementation of memristor-based artifical neural networks," Nature Communications 15, 1974 (2024). [Link]

  6. X. Feng, Z. G. Yu, H. Guo, Y. Li, Y.‐W. Zhang, and K.-W. Ang, "Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD‐Grown Monolayer MoS2 Transistors," Advanced Electronic Materials 10, 2300820 (2024).  [Link]

  7. V. Sorkin, H. Zhou, Z. G. Yu, K.-W. Ang, and Y.-W. Zhang, "An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions," ACS Applied Materials & Interfaces 16, 22166-22176 (2024). [Link]

  8. J. Wang, N. Ilyas, Y. Ren, Y. Ji, S. Li, C. Li, F. Liu, D. Gu, and K.-W. Ang, "Technology and integration roadmap for optoelectronic memristor," Advanced Materials 36, 2470072 (2024). [Link]

  9. [Invited Paper] L. Li, H. Xiang, H. Zheng, Y.-C. Chien, N. T. Duong, J. Gao, and K.-W. Ang, "Physical reservoirs based on MoS2-HZO integrated ferroelectric field-effect transistors for reservoir computing systems," Nanoscale Horizons 9, 752-763 (2024).  [Link]

  10. H. Zhou, S. Li, K.-W. Ang, and Y.-W. Zhang, "Recent advances in in-memory computing: exploring memristor and memtransistor arrays with 2D materials," Nano-Micro Letters 16, 121 (2024). [Link]

  11. N. T. Duong, Y. Shi, S. Li, Y.-C. Chien, H. Xiang, H. Zheng, P. Li, L. Li, Y. Wu, and K.-W. Ang, "Coupled ferroelectric-photonic in a retinomorphic hardware for in-sensor computing," Advanced Science 11, 2303447 (2024). [Link]

 

2023

  1. Z. Weng, H. Zheng, W. Lei, H. Jiang, K.-W. Ang, and Z. Zhao, "High-performance memristors based on few-layer manganese phosphorus trisulfide for neuromorphic computing," Advanced Functional Materials 33, 2305386 (2023). [Link]

  2. M. Chen, J.W. Chai, J. Wu, H. Zheng, W.-Y. Wu, J. Lourembam, M. Lin, J.-Y. Kim, J. Kim, K.-W. Ang, M.-F. Ng, H. Medina, S. W. Tong, and D. Chi, "Sublimation-based wafer-scale monolayer WS2 formation via self-limited thinning of few-layer WS2," Nanoscale Horizons 9, 132-142 (2023). [Link]

  3. Y. Wu, N. T. Duong, Y.-C. Chien, S. Liu, and K.-W. Ang, "A dynamic memory for reservoir computing utilizing ion migration in CuInP2S6," Advanced Electronic Materials 8, 2300481 (2023). [Link]

  4. Z. Weng, H. Zheng, L. Li, W. Lei, H. Jiang, K.-W. Ang, and Z. Zhao "Reliable memristor crossbar array based on 2D layered nickel phosphorus trisulfide for energy-efficient neuromorphic hardware," Small 19, 2304518 (2023). [Link]

  5. H. Xiang, Y.-C. Chien, L. Li, H. Zheng, S. Li, N. T. Duong, Y. Shi, and K.-W. Ang, "Enhancing memory window efficiency of ferroelectric transistor for neuromorphic computing via two-dimensional materials integration," Advanced Functional Materials 33, 2304657 (2023). [Link]

  6. Y.-C. Chien, H. Xiang, J. Wang, Y. Shi, X. Fong and K.-W. Ang, "Attack resilient true random number generators using ferroelectric-enhanced stochasticity in two-dimensional transistor," Small 19, 2302842 (2023). [Link]

  7. H. Zhou, V. Sorkin, S. Chen, Z.-G. Yu, K.-W. Ang and Y.-W. Zhang, "Design-dependent switching mechanisms of Schottky-barrier-modulated memristors based on 2D semiconductor," Advanced Electronic Materials 9, (2023). [Link]

  8. M. He, K. Wen, C. Deng, M. Li, Y. Cui, Q. Wang, H. Yu and K.-W. Ang, "Charge trapping layer enabled normally-off β-Ga2O3 MOSFET," IEEE Transactions on Electron Devices 70, 3191-3195 (2023). [Link]

  9. N. T. Duong, Y.-C. Chien, H. Xiang, S. Li, H. Zheng, Y. Shi and K.-W. Ang, "Dynamic ferroelectric transistor-based reservoir computing for spatiotemporal information processing," Advanced Intelligent Systems 5, 2300009 (2023). [Link]

  10. [Invited Paper] J.-Y. Kim, X. Ju, K.-W. Ang and D. Chi, "van der Waals layer transfer of 2D materials for monolithic 3D electronic system integration: review and outlook," ACS Nano 17, 1831-1844 (2023). [Link]

  11. Y.-C. Chien, H. Xiang, Y. Shi, N. T. Duong, S. Li and K.-W. Ang, "A MoS2 hafnium oxide based ferroelectric encoder for temporal-efficient spiking neural network," Advanced Materials 35, 2204949 (2023). [Link]

2022​

  1. B. Li, W. Wei, L. Luo, M. Gao, Z. G. Yu, S. Li, K.-W. Ang, and C. Zhu, "Nonvolatile logic‐in‐memory computing based on solution‐processed CuI memristor," Advanced Electronic Materials 8, 2200089 (2022). [Link]

  2. [Invited Paper] H. Xiang, Y.-C. Chien, Y. Shi, and K.-W. Ang, "Application of two-dimensional materials in hardware security for IoT: progress and perspective," Small Structures 3, 2200060 (2022). [Link]

  3. V. Sorkin, H. Zhou, Z. G. Yu, K.-W. Ang, Y.-W. Zhang, "The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: a first-principles study," Scientific Reports 12, 18001 (2022). [Link]

  4. M. E. Pam, S. Li, T. Su, Y.-C. Chien, Y. Li, Y. S. Ang, and K.-W. Ang, "Interface modulated resistive switching in Mo-irradiated ReS2 for neuromorphic computing," Advanced Materials 34, 2202722 (2022). [Link]

  5. Y. Li, S. Chen, Z. Yu, S. Li, Y. Xiong, M. E. Pam, Y.-W. Zhang, and K.-W. Ang, "In-memory computing using memristor arrays with ultrathin 2D PdSeOx/PdSe2 heterostructure," Advanced Materials 34, 2201488 (2022). [Link]

  6. M. F. Sahdan, Arramel, S. X. Lim, H. Wang, M. D. Birowosuto, C. H. Sow, K.-W. Ang, and A. T. S. Wee. Ang, "Metal-insulator transition switching in VOx-VSe2 heterojunctions," Physical Review Materials 6, 014003 (2022). [Link]

  7. [Invited Paper] L. Chen, M. E. Pam, S. Li, and K.-W. Ang, "Ferroelectric memory based on two-dimensional materials for neuromorphic computing," Neuromorphic Computing and Engineering 2, 022001 (2022). [Link]

  8. S. Li, M.-E. Pam, Y. Li, L. Chen, Y.-C. Chien, X. Fong, D. Chi, and K.-W. Ang, "Wafer-scale two-dimensional hafnium diselenide based memristor crossbar array for energy-efficient neural network hardware," Advanced Materials 34, 2103376 (2022). [Link]

  9. C. S. Lau, J. Y. Chee, L. Cao, Z.-E. Ooi, S. W. Tong, M. Bosman, F. Bussolotti, T. Deng, G. Wu, S.-W. Yang, T. Wang, S. L. Teo, C. Wong, J. W. Chai, L. Chen, Z. M. Zhang, K.-W. Ang, L. K. Ang, Y. S. Ang, and K. E. J. Goh, "Gate defined quantum confinement in 2D CVD WS2," Advanced Materials 34, 2103907 (2022). [Link]

  10. C. Zhang, H. Zhou, S. Chen, G. Zhang, Y.-Z. Yu, D. Chi, Y.-W. Zhang, and K.-W. Ang, "Recent progress on 2D materials-based artificial synapses," Critical Review in Solid State and Materials Sciences 47 (5), 665-690 (2022). [Link]

 

2021​

  1. [Invited Paper] L. Huang, B. Dong, Z. G. Yu, J. Zhou, Y. Ma, Y.-W. Zhang, C. Lee, and K.-W. Ang, "Mid-infrared modulators integrating silicon and black phosphorus photonics," Materials Today Advances 12, 100170 (2021). [Link]

  2. Y.-C. Chien, X. Feng, L. Chen, K.-C. Chang, W. C. Tan, S. Li, L. Huang, and K.-W. Ang, "Charge carrier mobility and series resistance extraction in two-dimensional field-effect transistors: Towards the universal technique," Advanced Functional Materials 31, 2105003 (2021). [Link]

  3. M. He, W.-C. Cheng, F. Zeng, Z. Qiao, Y.-C. Chien, Y. Jiang, W. Li, L. Jiang, Q. Wang, K.-W. Ang and H. Yu, "Improvement of β-Ga₂O₃ MIS-SBD interface using Al-reacted interfacial layer," IEEE Transactions on Electron Devices 68, 33143319 (2021). [Link]

  4. Y.-C. Chien, H. Londono-Ramirez, C.-W. Kuo, Y.-C. Tsao, M. Nag, T.-C. Chang, and K.-W. Ang, "An analytical method for parameter extraction in oxide semiconductor field-effect transistors," IEEE Transactions on Electron Devices 68, 2717-2722 (2021). [Link]

  5. Y. Li, L. Loh, S. Li, L. Chen, B. Li, M. Bosman, and K.-W. Ang, "Anomalous resistive switching in memristors based on two dimensional palladium diselenide using heterophase grain boundaries," Nature Electronics 4, 348-356 (2021). [Link]

  6. X. Feng, S. Li, S. L. Wong, S. Tong, L. Chen, P. Zhang, L. Wang, X. Fong, D. Chi, and K.-W. Ang, "Self-selective multi-terminal memtransistor crossbar array for in-memory computing," ACS Nano 15, 1764 (2021). [Link]

  7. [Invited Paper] W. C. Tan, and K.-W. Ang, "Volatile organic compounds sensors based on two-dimensional materials," Advanced Electronic Materials 7, 2001071 (2021). [Link]

  8. S. Li, B. Li, X. Feng, L. Chen, Y. Li, L. Huang, X. Fong, and K.-W. Ang, "Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing," npj 2D Materials and Applications 5 (2021). [Link]

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2020​

  1. J. Wei, Y. Li, L. Wang, W. Liao, B. Dong, C. Xu, C. Zhu, K.-W. Ang, C.-W. Qiu, and C. Lee, "Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection," Nature Communications 12, 6404 (2020). [Link]

  2. P. Zhang, L. Wang, K.-W. Ang, and X. Fong, "Transition from trap-mediated to band-like transport in polycrystalline monolayer molybdenum disulfide memtransistor," Applied Physics Letters 117, 223101 (2020). [Link]

  3. B. Li, S. Li, H. Wang, L. Chen, L. Liu, X. Feng, Y. Li, J. Chen, and K.-W. Ang, "An electronic synapse based on two dimensional ferroelectric CuInP2S6," Advanced Electronic Materials 6, 2000760 (2020). [Link]

  4. [Invited Paper, Most Accessed Article] Y. Li, and K.-W. Ang, "Hardware implementation of neuromorphic computing using large scale memristor crossbar arrays," Advanced Intelligent Systems 2, 2000137 (2020). [Link]   (Most accessed 10/2020 to 09/2021)

  5. [Invited Paper, Feature Article] L. Huang, and K.-W. Ang, "Black phosphorus photonics towards on-chip applications," Applied Physics Reviews 7, 031302 (2020). [Link]

  6. B. Dong, Y. Yang, Q. Shi, S. Xu, Z. Sun, S. Zhu, Z. Zhang, D.-L. Kwong, G. Zhou, K.-W. Ang, and C. Lee, "Wearable triboelectric-human-machine-interface (THMI) using robust nanophotonic readout," ACS Nano 14, 8915-8930 (2020). [Link]

  7. L. Chen, Z. G. Yu, D. Liang, S. Li, W. C. Tan, Y.-W. Zhang, K.-W. Ang, "Ultrasensitive and Robust Two-dimensional Indium Selenide Flexible Electronics and Sensors for Human Motion Detection," Nano Energy 76, 105020 (2020). [Link]

  8. S. Ahmad, M. Zubair, O. Jalil, M. Q. Mehmood, U. Younis, X. Liu, K.-W. Ang, and L. K. Ang, "Generalized scaling law for exciton binding energy in two-dimensional materials," Physical Review Applied 13, 064062 (2020). [Link]

  9. Y. Ma, B. Dong, J. Wei, Y. Chang, L. Huang, K.-W. Ang, and C. Lee "High‐Responsivity Mid‐Infrared Black Phosphorus Slow Light Waveguide Photodetector," Advanced Optical Materials 8, 2000337 (2020). [Link]

  10. L. Chen, L. Wang, Y. Peng, X. Feng, S. Sarkar, S. Li, B. Li, L. Liu, K. Han, X. Gong, J. Chen, Y. Liu, G. Han, and K.-W. Ang, "A van der Waals synaptic transistor based on ferroelectric HfZrO and two-dimensional tungsten disulfide," Advanced Electronic Materials 6, 2000057 (2020). [Link]

  11. [Invited Paper] X. Feng, X. Liu, and K.-W. Ang, "2D photonic memristor beyond graphene: progress and prospects," Nanophotonics 9, 1579-1599 (2020). [Link]

 

2019​

  1. D. Xiang, T. Liu, J. Wang, P. Wang, L. Wang, Y. Zheng, Y. Wang, J. Gao, K.-W. Ang, G. Eda, W. Hu, L. Liu, and W. Chen, "Anomalous broadband spectrum photodetection in rhenium disulfide transistor," Advanced Optical Materials 7, 1901115 (2019). [Link]

  2. [Front Cover, Most Accessed Article] X. Feng, Y. Li, L. Wang, S. Chen, Z. G. Yu, W. C. Tan, N. Macadam, G. Hu, L. Huang, L. Chen, X. Gong, D. Chi, T. Hasan, A. V.-Y. Thean, Y.-W. Zhang, and K.-W. Ang, "A fully-printed flexible MoS2 memristive artificial synapse with femto joules switching energy," Advanced Electronic Materials 5, 1900740 (2019). [Link]  (Most accessed 11/2019 to 09/2021)

  3. L. Wang, L. Wang, K.-W. Ang, A. V.-Y. Thean, and G. Liang, "A compact model for 2-D poly-MoS2 FETs with resistive switching in postsynaptic simulation," IEEE Transactions on Electron Devices 66, 4092-4100 (2019). [Link​]

  4. B. Dong, X. Luo, S. Zhu, T. Hu, M. Li, D. Hasan, L. Zhang, S. J. Chua, J. Wei, Y. Chang, Y. Ma, P. Vachon, G.-Q. Lo, K.-W. Ang, D.-L. Kwong, and C. Lee, "Thermal annealing study of the mid-infrared aluminum nitride on insulator (AlNOI) photonics platform," Optics Express 27 (14), 19815-19826 (2019). [Link​]

  5. X. Huang, X. Feng, L. Chen, L. Wang, W. C. Tan, L. Huang, and K.-W. Ang, "Fabry-perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure," Nano Energy 62, 667-673 (2019). [Link] 

  6. [Front Cover, Most Accessed Article] L. Wang, L. Chen, S. L. Wong, X. Huang, W. Liao, C. Zhu, Y.-F. Lim, D. Li, X. Liu, D. Chi, and K.-W. Ang, "Electronic devices and circuits based on wafer-scale polycrystalline monolayer MoS2 by chemical vapor deposition," Advanced Electronic Materials 5, 1900393 (2019). [Link]   (Most accessed in 08/2019) 

  7. [Featured Article, Highly Cited Paper (Web of Science)] L. Wang, W. Liao, S. L. Wong, Z. G. Yu, S. Li, Y.-F. Lim, X. Feng, W. C. Tan, X. Huang, L. Chen, L. Liu, J. Chen, X. Gong, C. Zhu, X. Liu, Y.-W. Zhang, D. Chi, and K.-W. Ang, "Artificial synapses based on multi-terminal memtransistors for neuromorphic application," Advanced Functional Materials 29, 1901106 (2019). [Link]   (Highly Cited Paper by Web of Science, Featured in MaterialsViewChina.com) 

  8. L. Wang, W. Liao, S. Xu, X. Gong, C. Zhu, and K.-W. Ang, "Unipolar n-type conduction in black phosphorus induced by atomic layer deposited MgO," IEEE Electron Device Letters 40 (3), 471-474 (2019). [Link]

  9. L. Huang, B. Dong, X. Guo, Y. Chang, N. Chen, X. Huang, W. Liao, C. Zhu, H. Wang, C. Lee, and K.-W. Ang, "Waveguide-integrated black phosphorus photodetector for mid-infrared applications," ACS Nano 13, 913-921 (2019). [Link]

  10. B. Dong, X. Luo, S. Zhu, M. Li, D. Hasan, L. Zhang, S. J. Chua, J. Wei, Y. Chang, G.-Q. Lo, K.-W. Ang, D.-L. Kwong, and C. Lee, "Aluminum nitride on insulator (AlNOI) platform for mid-infrared photonics," Optics Letters 44, 73-76 (2019). [Link].

 

2018​

  1. [Invited Paper] W. C. Tan, L. Wang, X. Feng, L. Chen, L. Huang, X. Huang, and K.-W. Ang, "Recent advances in black phosphorus-based electronic devices," Advanced Electronic Materials 4, 1800666 (2018). [Link]

  2. Y. Ma, B. Dong, B. Li, K.-W. Ang, and C. Lee, "Dispersion engineering and thermo-optic tuning in mid-infrared photonic crystal slow light waveguides on silicon-on-insulator," Optics Letters 43, 5504-5507 (2018). [Link]

  3. Y. Chang, D. Hasan, B. Dong, J. Wei, Y. Ma, G. Zhou, K.-W. Ang, and C. Lee, "All-dielectric surface enhanced infrared absorption based gas sensor using guided resonance," ACS Applied Materials & Interfaces 10, 38272-38279 (2018). [Link]

  4. W. Liao, L. Wang, L. Chen, W. Wei, Z. Zeng, X. Feng, L. Huang, W. C. Tan, X. Huang, K.-W. Ang, and C.-X. Zhu, "Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementry circuits," Nanoscale 10, 17007-17014 (2018). [Link]

  5. [Most Read Article] L. Wang, L. Huang, W. C. Tan, X. Feng, L. Chen, and K.-W. Ang, "Tunable black phosphorus heterojunction transistor for multifunctional optoelectronics," Nanoscale 10, 14359-14367 (2018). [Link]  (Top 5% most read article during July-Sep 2018)

  6. A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, "Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure," Advanced Optical Materials 6, 1800461 (2018). [Link]

  7. [Invited Paper, Front Cover] X. Feng, L. Wang, X. Huang, L. Chen, and K.-W. Ang, "Complementary black phosphorus nanoribbons field-effect transistors and circuits," IEEE Transactions on Electron Devices 65, 4122-4128 (2018). [Link] 

  8. X. Huang, Y. Cai, X. Feng, W. C. Tan, D. M. N. Hasan, L. Chen, N. Chen, L. Wang, L. Huang, T. Duffin, C. A. Nijhuis, Y.-W. Zhang, C. Lee, and K.-W. Ang, "Black phosphorus carbide as a tunable anisotropic plasmonic metasurface," ACS Photonics 5, 3116-3123 (2018). [Link]

  9. L. Chen, S. Li, X. Feng, L. Wang, X. Huang, Benjamin C.-K. Tee, and K.-W. Ang, "Gigahertz integrated circuits based on complementary black phosphorus transistors," Advanced Electronic Materials 4, 1800274 (2018). [Link]

  10. X. Feng, X. Huang, L. Chen, W. C. Tan, L. Wang, and K.-W. Ang, "High mobility anisotropic black phosphorus nanoribbons field-effect transistor," Advanced Functional Materials 28, 1801524 (2018). [Link]. 

  11. U. Younis, X. Luo, B. Dong, L. Huang, V. Sudheer, E.-J. Lim, G.-Q. Lo, C. Lee, A. A. Bettiol, and K.-W. Ang, "Towards low-loss waveguides in SOI and Ge-on-SOI for mid-IR sensing," Journal of Physics Communication 2, 045029 (2018). [Link]. 

  12. B. Tan, Z. G. Yu, L. Huang, J. Chai, S. L. Wong, J. Deng, W. Yang, H. Gong, S. Wang, K.-W. Ang, Y.-W. Zhang, and D. Chi, "Direct n- to p-type channel conversion in monolayer/few-layer WS2 field-effect transistors by atomic nitrogen treatment," ACS Nano 12, 2506 (2018). [Link]

  13. W. C. Tan, L. Huang, R. J. Ng, L. Wang, D. M. N. Hasan, T. J. Duffin, K. S. Kumar, C. A. Nijhuis, C. Lee, and K.-W. Ang, "A black phosphorus carbide infrared phototransistor," Advanced Materials 30, 1705039 (2018). [Link]

  14. [Invited Paper, Most Accessed Article, Featured Article] L. Wang, L. Huang, W. C. Tan, X. Feng, L. Chen, X. Huang, and K.-W. Ang, "Two-dimensional photovoltaic devices: Progress and prospects," Small Methods 2, 1700294 (2018). [Link]   (Most accessed 10/2017 to 02/2019, Featured in MaterialsViewChina.com) 

  15. L. Wang, L. Huang, W. C. Tan, X. Feng, L. Chen, and K.-W. Ang, "Pronounced photovoltaic effect in electrically tunable lateral black phosphorus heterojunction diode," Advanced Electronic Materials 4, 1700442 (2018). [Link]

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2017

  1. L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, and K.-W. Ang, "Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power," ACS Applied Materials & Interfaces 9, 36130-36136 (2017). [Link]

  2. Y. Liu, and K.-W. Ang, "Monolithically integrated flexible black phosphorus complementary inverter circuits,"        ACS Nano 11, 7416-7423 (2017). [Link]

  3. W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y.-W. Zhang, C. A. Nijhuis, X. Liu, and K.-W. Ang, "Few-layer black phosphorus carbide field-effect transistor via carbon doping," Advanced Materials 29, 1700503 (2017). [Link]

  4. X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, "Monolayer WMoS2 grown by atmospheric pressure chemical vapor deposition: Bandgap engineering and field effect transistors," Advanced Functional Materials 27, 1606469 (2017). [Link]

  5. P. Xia, X. Feng, R. J. Ng, S. Wang, D. Chi, C. Li, Z. He, X. Liu, and K.-W. Ang, "Impact and origin of interface states in MOS capacitor with monolayer MoS2 and HfO2 high-k dielectric," Scientific Reports 7, 40669 (2017). [Link]

  6. Y. Liu, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, "Al-doped Black Phosphorus p-n Homojunction Diode for High Performance Photovoltaic," Advanced Functional Materials 27 (7), 1604638 (2017). [Link]

  7. A. Prakash, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, "Black phosphorus n-type field-effect transistor with ultra-high electron mobility via aluminum adatoms doping," Small 13 (5), 1602909 (2017). [Link]

  8. X. Liu, L. Chen, Q. Liu, J. He, K. Li, W. Yu, and K.-W. Ang, "Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy," Journal of Alloys and Compounds 698, 141-146 (2017). [Link]

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2016

  1. Z.-P. Ling, J.-T. Zhu, X. Liu, and K.-W. Ang, "Interface engineering for the enhancement of carrier transport in black phosphorus transistor with ultra-thin high-k gate dielectric," Scientific Reports 6, 26609 (2016). [Link]

  2. K. Li, K.-W. Ang, Y. Lu, and X. Liu, "Effects of Al2O3 capping layers on the thermal properties of thin black phosphorus," Applied Physics Letters 109, 261901 (2016). [Link]

  3. X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang, "Anomalously enhanced thermal stability of phosphorene via metal adatoms doping: An experimental and first-principles study," Nano Research 9 (9), 2687-2695 (2016). [Link]

  4. U. Younis, A. E.-J. Lim, P. G.-Q. Lo, A. A. Bettiol, and K.-W. Ang, "Propagation loss improvement in Ge-on-SOI mid-infrared waveguides using rapid thermal annealing," IEEE Photonics Technology Letters 28, 2447-2450 (2016). [Link]

  5. X. Liu, K.-W. Ang, W. Yu, J. He, X. Feng, Q. Liu, H. Jiang, D. Tang, J. Wen, Y. Lu, W. Liu, P. Cao, S. Han, J. Wu, W. Liu, X. Wang, D. Zhu, and Z. He, "Black phosphorus based field effect transistors with simultaneously achieved near ideal subthreshold swing and high hole mobility at room temperature," Scientific Reports 6, 24920 (2016). [Link]

  6. X. Liu, Y. Zhang, Q. Liu, J. He, L. Chen, K. Li, F. Jia, Y. Zeng, Y. Lu, W. Yu, D. Zhu, W. Liu, J. Wu, Z. He, and K.-W. Ang, "Band alignment of ZnO/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy," Applied Physics Letters 109, 071602 (2016). [Link]

  7. U. Younis, S. K. Vanga, A. E.-J. Lim, P. G.-Q. Lo, A. A. Bettiol, and K.-W. Ang, "Germanium-on-SOI waveguides for mid-infrared wavelengths," Optics Express 24, 11987-11993 (2016). [Link]

​

2015

  1. Z.-P. Ling, S. Sarkar, S. Mathew, J.-T. Zhu, K. Gopinadhan, T. Venkatesan, and K.-W. Ang, "Black phosphorus transistors with near band edge contact Schottky barrier," Scientific Reports 5, 18000 (2015). [Link]

  2. Z.-P. Ling, and K.-W. Ang, "Thermal effects on the Raman phonon of few-layer phosphorene," APL Materials 3, 126104 (2015). [Link]

  3. X. Liu, J. He, Q. Liu, D. Tang, J. Wen, W. Liu, W. Yu, J. Wu, Z. He, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, and K.-W. Ang, "Low temperature carrier transport study of monolayer MoS2 field effect transistor prepared by chemical vapor deposition under an atmospheric pressure," Journal of Applied Physics 118 (12), 124506 (2015). [Link]

  4. X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, "Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: Effect of CHF3 treatment," Applied Physics Letters 107, 101601 (2015). [Link]

  5. X. Liu, J. He, D. Tang, Q. Liu, J. Wen, W. Yu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, K. W. Ang, and Z. He, "Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy," Journal of Alloys and Compounds 650, 502-507 (2015). [Link]

  6. Z. P. Ling, R. Yang, J. W. Chai, S. J. Wang, W. S. Leong, Y. Tong, D. Lei, Q. Zhou, X. Gong, D. Z. Chi, and K.-W. Ang, "Large-scale two-dimensional MoS2 photodetectors by magnetron sputtering," Optics Express 23 (10), 13580-13586 (2015). [Link]

​

2014 & Before

  1. F.-F. Ren, W.-Z. Xu, J. Ye, K.-W. Ang, H. Lu, R. Zhang, M. Yu, G.-Q. Lo, H. H. Tan, and C. Jagadish, "Second-order surface-plasmon assisted responsivity enhancement in germanium nano-photodetectors with bull’s eye antennas," Optics Express 22 (13), 15949-15956 (2014). [Link]

  2. [Invited Paper] C. Hobbs, K.-W. Ang, R. Hill, I. Ok, B.-G. Min, D. Franca, H. Stamper, S. Vivekanand, M. Rodgers, S. Gausepohl, P. Kirsch, R. Jammy, "Non Planar Non Si CMOS-Challenges and Opportunities," ECS Transactions 50 (9), 669-672 (2013). [Link]

  3. [Invited Paper] C. D. Young, K. Akarvardar, K. Matthews, M. O. Baykan, J. Pater, I. Ok, T. Ngai, K.-W. Ang, M. Minakais, G. Bersuker, "Electrical Characterization and Reliability Assessment of Double-Gate FinFETs," ECS Transactions 50 (4), 201-206 (2013). [Link]

  4. C. D. Young, K. Akarvardar, M. O. Baykan, K. Matthews, I. Ok, T. Ngai, K.-W. Ang, J. Pater, C. E. Smith, M. M. Hussain, P. Kirsch, "(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation," Solid State Electronics 78, 2-10 (2012). [Link]

  5. W. S. Yoo, T. Ishigaki, T. Ueda, J. Kajiwara, K. Kang, P. Y. Hung, K.-W. Ang, B.-G. Min, "Characterization of Strain-Engineered Si: C Epitaxial Layers on Si Substrates," ECS Transaction 45 (6), 23-29 (2012). [Link]

  6. K. Akarvardar, M. Rodgers, V. Kaushik, C. S. Johnson, H. Chong, I. Ok, K.-W. Ang, S. Gausepohl, C. Hobbs, P. Kirsch, "Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETs," IEEE Electron Device Letters 33 (5), 631-633 (2012). [Link]

  7. K. Akarvardar, C. D. Young, M. Baykan, I. Ok, T. Ngai, K.-W. Ang, M. P. Rodgers, S. Gausepohl, P. Majhi, C. Hobbs, "Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities," IEEE Electron Device Letters 33 (3), 351-353 (2012). [Link]

  8. F.-F. Ren, K.-W. Ang, J. Ye, M. Yu, G.-Q. Lo, D.-L. Kwong, "Split Bull’s Eye Shaped Aluminum Antenna for Plasmon-Enhanced Nanometer Scale Germanium Photodetector," Nano Letters 11 (3), 1289-1293 (2011). [Link]

  9. F.-F. Ren, K.-W. Ang, J. Song, Q. Fang, M. Yu, G.-Q. Lo, and D.-L. Kwong, "Surface plasmon enhanced responsivity in a waveguided germanium metal-semiconductor-metal photodetector," Applied Physics Letters 97, 91102 (2010). [Link]

  10. [Feature Article] K.-W. Ang, and G.-Q. Lo, “AVALANCHE PHOTODETECTOR: Si charge avalanche enhances APD sensitivity beyond 100 GHz,” Laser Focus World 46 (8), (2010). [Link]

  11. Q. Fang, T.-Y. Liow, J. F. Song, K.-W. Ang, M. B. Yu, G. Q. Lo, D.-L. Kwong, "WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability," Optics Express 18 (5), 5106-5113 (2010). [Link]

  12. [Invited Paper] G.-Q. Lo, K.-W. Ang, T.Y. Liow, Q. Fang, J. Zhang, S.Y. Zhu, J.F. Song, Y.Z. Xiong, F.F. Ren, M.B. Yu, D.L. Kwong, "Silicon Photonics Technologies for Monolithic Electronic-Photonic Integrated Circuit," ECS Transactions 28 (1), 3-11 (2010). [Link]

  13. C. R. Doerr, P. J. Winzer, Y.-K. Chen, S. Chandrasekhar, M. S. Rasras, L. Chen, T.-Y. Liow, K.-W. Ang, G.-Q. Lo, "Monolithic polarization and phase diversity coherent receiver in silicon," Journal of Lightwave Technology 28, 520–525 (2010). [Link]

  14. T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, D.-L. Kwong, "Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization," IEEE Journal of Selected Topics in Quantum Electronics 16 (1), 307-315 (2010). [Link]

  15. K.-W. Ang, T.-Y. Liow, M.-B. Yu, Q. Fang, J. Song, G.-Q. Lo, D.-L. Kwong, "Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform," IEEE Journal of Selected Topics in Quantum Electronics 16 (1), 106-113 (2010). [Link]

  16. S. Zhu, K.-W. Ang, S. C. Rustagi, J. Wang, Y. Z. Xiong, G. Q. Lo, D. L. Kwong, " Waveguided Ge/Si Avalanche Photodiode With Separate Vertical SEG-Ge Absorption, Lateral Si Charge, and Multiplication Configuration," IEEE Electron Device Letters 30 (9), 934-936 (2009). [Link]

  17. K.-W. Ang, J. W. Ng, G.-Q. Lo, D.-L. Kwong, "Impact of field-enhanced band-traps-band tunneling on the dark current generation in germanium p-i-n photodetector," Applied Physics Letters 94, 223515 (2009). [Link]

  18. H.-S. Wong, K.-W. Ang, L. Chan, G. Samudra, and Y.-C. Yeo, "Contact resistance reduction technology using selenium segregation for n-MOSFETs with silicon-carbon source and drain," IEEE Trans. Electron Devices 56 (5), 1128-1134 (2009). [Link]

  19. K.-W. Ang, M. B. Yu, G. Q. Lo, D. L. Kwong, "Low-Voltage and High-Responsivity Germanium Bipolar Phototransistor for Optical Detections in the Near-Infrared Regime," IEEE Electron Device Letters 29 (10), 1124-1127 (2008). [Link]

  20. Fangyue Liu, Hoong-Shing Wong, Kah-Wee Ang, Ming Zhu, Xincai Wang, Doreen Mei-Ying Lai, Poh-Chong Lim, Yee-Chia Yeo, "Laser annealing of amorphous germanium on silicon–germanium source/drain for strain and performance enhancement in pMOSFETs," IEEE Electron Device Letters 29 (8), 885-888 (2008). [Link]

  21. H.-S. Wong, F.-Y. Liu, K.-W. Ang, G. Samudra, and Y.-C. Yeo, "Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon carbon source/drain stressors," IEEE Electron Device Letters 29 (8), 841-844 (2008). [Link]

  22. K.-W. Ang, M. B. Yu, S. Y. Zhu, K. T. Chua, G. Q. Lo, D. L. Kwong, "Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation," IEEE Electron Device Letters 29 (7), 708-710 (2008). [Link]

  23. K.-W. Ang, S. Zhu, J. Wang, K.-T. Chua, M.-B. Yu, G.-Q. Lo, D.-L. Kwong, "Novel silicon-carbon (Si: C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors," IEEE Electron Device Letters 29 (7), 704-707 (2008). [Link]

  24. H.-S. Wong, K.-W. Ang, L. Chan, K.-M. Hoe, C.-H. Tung, N. Balasubramaniam, D. Weeks, T. Landin, J. Spear, S. G. Thomas, G. Samudra, and Y.-C. Yeo, "Silicon-carbon stressors with high substitutional carbon concentration and in-situ doping formed in source/drain extensions of n-channel transistors," IEEE Electron Device Letters 29 (5), 460-463 (2008). [Link]

  25. K.-W. Ang, S. Zhu, M. Yu, G.-Q. Lo, D.-L. Kwong, "High-Performance Waveguided Ge-on-SOI Metal–Semiconductor–Metal Photodetectors With Novel Silicon–Carbon (Si: C) Schottky Barrier Enhancement Layer," IEEE Photonics Technology Letters 20 (9), 754-756 (2008). [Link]

  26. [Best Paper - IEEE Paul Rappaport Award] K.-W. Ang, J. Lin, C.-H. Tung, N. Balasubramanian, G. S. Samudra, and Y.-C. Yeo, "Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance," IEEE Trans. Electron Devices 55 (3), 850-857 (2008). [Link]

  27. R. T. P. Lee, L.-T. Yang, T.-Y. Liow, K.-M. Tan, A. E.-J. Lim, K.-W. Ang, D. M. Y. Lai, K. M. Hoe, G.-Q. Lo, G. S. Samudra, D. Z. Chi, Y.-C. Yeo, "Nickel-silicide: carbon contact technology for n-channel MOSFETs with silicon–carbon source/drain," IEEE Electron Device Letters 29 (1), 89-92 (2008). [Link]

  28. K.-W. Ang, C. Wan, N. Balasubramanian, G. S. Samudra, and Y.-C. Yeo, "Hot carrier effects in strained n-channel transistor with silicon-carbon source/drain stressors and its orientation dependence," IEEE Electron Device Letters 28 (11), 996-999 (2007). [Link]

  29. K.-W. Ang, H.-C. Chin, K.-J. Chui, M.-F. Li, G. S. Samudra, Y.-C. Yeo, "Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions," Solid-State Electronics 51 (11), 1444-1449 (2007). [Link] 

  30. K.-W. Ang, K.-J. Chui, C.-H. Tung, N. Balasubramanian, G. S. Samudra, and Y.-C. Yeo, "Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions," IEEE Trans. Electron Devices 54 (11), 2910- 2917 (2007). [Link]

  31. K.-W. Ang, C.-H. Tung, N. Balasubramanian, G. S. Samudra, Y.-C. Yeo, "Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure," IEEE Electron Device Letters 28 (7), 609-612 (2007). [Link]

  32. K.-W. Ang, K.-J. Chui, A. Madan, Y. Wang, L.-Y. Wong, C.-H. Tung, N. Balasubramanian, M. F. Li, G. S. Samudra, and Y.-C. Yeo, "Strained P-MOSFET with condensed silicon-germanium source/drain on thin body SOI substrate for enhanced drive current performance," IEEE Electron Device Letters 28 (6), 509-512 (2007). [Link]

  33. K. M. Wong, W. K. Chim, K.-W. Ang, and Y.-C. Yeo, "Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements," Applied Physics Letters 90, 153507 (2007). [Link]

  34. K.-W. Ang, K.-J. Chui, C.-H. Tung, N. Balasubramanian, M.-F. Li, G. S. Samudra, and Y.-C. Yeo, "Enhanced strain effects in 25 nm gate length thin-body N-MOSFETs with silicon-carbon source/drain and tensile stress liner," IEEE Electron Device Letters 28 (4), 301-304 (2007). [Link]

  35. K.-J. Chui, K.-W. Ang, N. Balasubramanian, M.-F. Li, G. S. Samudra, Y.-C. Yeo, "N-MOSFET with silicon–carbon source/drain for enhancement of carrier transport," IEEE Trans. Electron Devices 54 (2), 249-256 (2007). [Link]

  36. K.-J. Chui, K.-W. Ang, H.-C. Chin, C. Shen, L.-Y. Wong, C.-H. Tung, N. Balasubramanian, M. F. Li, G. S. Samudra, Y.-C. Yeo, "Strained-SOI n-channel transistor with silicon–carbon source/drain regions for carrier transport enhancement," IEEE Electron Device Letters 27 (9), 778-780 (2006). [Link]

  37. K.-W. Ang, K.-J. Chui, V. Bliznetsov, C.-H. Tung, A. Du, N. Balasubramanian, G. Samudra, M. F. Li, and Y.-C. Yeo, “Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source/drain stressors,” Applied Physics Letters 86 (9), 093102 (2005). [Link]

​

Conferences

 

2024​

  1. [Plenary Talk] K.-W. Ang, Global Meet on Laser, Optics and Photonics, Madrid, Spain, Aug. 8-10, 2024.

  2. [Invited Talk] K.-W. Ang, International Conference on Graphene Technology and 2D Materials, Lisbon, Portugal, Aug. 22-24, 2024.

  3. [Invited Talk] K.-W. Ang, "Compute-in-memory hardware using 2D memristive crossbar array for convolution neural networks," 21st International Symposium on the Physics of Semiconductors and Applications (ISPSA), Jeju, Korea, Jun. 2-6, 2024.

  4. [Invited Talk] K.-W. Ang, "In-sensor computing using ferroelectric retinomorphic hardware," 2D Transition Metal Dichalcogenides, Hong Kong, May 20-23, 2024.

  5. [Invited Talk] K.-W. Ang, 2024 MRS Spring Meeting & Exhibit, Seattle, Washington, USA, Apr. 22-26, 2024.

  6. [Invited Talk] K.-W. Ang, 4th International Symposium on Emerging Memory and Computing (ISMC), Hong Kong, Jan. 9-10, 2024.

2023​

  1. [Keynote Talk] K.-W. Ang, "Brain-inspired computing based on 2D materials memristors and memtransistors," International Conference on Bio-inspiration, Nice, France, Dec. 12-14, 2023.

  2. [Invited Talk] K.-W. Ang, "Neuromorphic computing using 2D materials-based memory," 13th International Conference on Advanced Materials and Devices, Jeju, Korea, Dec. 4-8, 2023.

  3. [Invited Talk] N. T. Duong, K.-W. Ang, "In-sensor computing based on ferroelectric retinomorphic hardware for biologically inspired machine vision," European Summit on Laser Optics and Photonics Technology, Barcelona, Spain, Sep. 25-27, 2023.

  4. [Best Oral Presentation] Y.-C. Chien, H. Xiang, L. Li, K.-W. Ang, "Large memory window in MoS2-HZO ferroelectric field-effect transistor," 1st International Conference on Low-Energy Digital Devices and Computing, Singapore, Jun. 29-Jul. 1, 2023.S

  5. [Invited Talk] Y.-W. Zhang, S. Chen, Z. Yu, V. Sorkin, H. Zhou and K.-W. Ang, "Semiconducting 2D Materials for Neuromorphic Computing," International Conference on Materials for Advanced Technologies (ICMAT), Singapore, Jun. 26-29, 2023.

  6. V. Sorkin, S. Chen, Z. Yu, Y.-W. Zhang, H. Zhou and K.-W. Ang, "The Effects of Point Defect Type, Location, and Density on the Schottky Barrier Height: A First Principle Study," International Conference on Materials for Advanced Technologies (ICMAT), Singapore, Jun. 26-29, 2023.

  7. M. Chen, J. Chai, J. Wu, H. Zheng, H. Medina, S. W. Tong, K.-W. Ang and D. Chi, "Sublimation-based Wafer-scale Monolayer WS2 Formation via Self-limited Etching," International Conference on Materials for Advanced Technologies (ICMAT), Singapore, Jun. 26-29, 2023.

 

2022​

  1. [Young Researcher Award] S. Li, S. Jain, M.-E. Pam, L. Chen, Y.-C. Chien, X. Fong, D. Chi, and K.-W. Ang, "Neural Network Hardware Accelerator using Memristive Crossbar Array based on Wafer-scale 2D HfSe2," 2022 International Conference on Solid State Devices and Materials, Chiba, Japan, Sep. 26-29, 2022.

  2. X. Feng, and K.-W. Ang, "Self-selective monolayer MoS2 memtransistor crossbar array for in-memory computing applications," 2022 International Conference on Solid State Devices and Materials, Chiba, Japan, Sep. 26-29, 2022.

  3. [Invited Talk] K.-W. Ang, "Non-volatile memory based on 2D materials for neuromorphic computing," 2nd International Conference on Materials for Humanity, Singapore, Sep. 19-21, 2022.

  4. [Best Presentation Award] M. He, Q. Wang, H. Yu, K.-W. Ang, "Investigation of β-Ga2O3 merged P-i-N Schottky diode with enhanced breakdown voltage and low turn-on voltage," 2022 IEEE 5th International Conference on Electronics Technology (ICET), Chengdu, China, May 13-16, 2022.

 

2021​

  1. [Invited Talk] Y.-W. Zhang, Z.-Y. Ong, G. Zhang, Z.-G. Yu, K.-W. Ang, "Strain-engineering the thermal and electronic properties of 2D semiconducting materials," 2021 MRS Fall Meeting & Exhibit, Boston, Massachusetts, USA, Nov. 28-Dec. 3, 2021.

  2. [Invited Talk] K.-W. Ang, "Neuromorphic nanoelectronic materials and devices," 12th Recent Progress in Graphene and 2D Materials Research (RPGR) Conference, Seoul, South Korea, Oct. 10-14, 2021.

  3. [Invited Talk] K.-W. Ang, "Flexible electronics and sensors based on 2D materials," 11th International Conference on Flexible and Printed Electronics Online Conference, Niigata, Japan, Sep. 27-Oct 1., 2021.

  4. [Young Researcher Award] Y.-C. Chien, X. Feng, K.-C. Chang, W. C. Tan, S. Li, L. Chen, L. Huang, and K.-W. Ang, "Universal method on charge carrier mobility and series resistance extraction in two-dimensional field-effect transistors," 2021 International Conference on Solid State Devices and Materials (Virtual), Sep. 6-9, 2021.

  5. [Invited Talk] K.-W. Ang, "Artificial synapse based on MoS2 memtransistor for neuromorphic computing," 28th International Workshop on Active-Matrix Flat Panel Displays and Devices (AM-FPD '21), Kyoto, Japan, Jun. 29-Jul. 2, 2021.

​

2020​

  1. [Invited Talk] K.-W. Ang, "Two dimensional artificial synapses for neuro-inspired computing," 2020 International Symposium on VLSI Technology, Systems and Applications, Hsinchu, Taiwan, Apr. 22-23, 2020.

  2. S. Li, B. Li, X. Feng, L. Chen, Y. Li, L. Huang, X. Gong, X. Fong, and K.-W. Ang, "Gradual resistive switching in electron beam irradiated ReS2 transistor and its application as electronic synapse," 2020 International Symposium on VLSI Technology, Systems and Applications, Hsinchu, Taiwan, Apr. 22-23, 2020.

  3. M. He, F. Zeng, W.-C. Cheng, Q. Wang, H. Yu, and K.-W. Ang, "Beta-Ga2O3 MOSFET device optimization via TCAD," 4th IEEE Electron Devices Technology and Manufacturing Conference, Mar. 16-18, 2020.

​

2019​

  1. L. Chen, D. Liang, Z. Yu, S. Li, X. Feng, B. Li, Y. Li, Y.-W. Zhang, and K.-W. Ang, "Ultrasensitive flexible strain sensor based on two-dimensional InSe for human motion surveillance," 65th IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 7-11, 2019.

  2. L. Huang, B. Dong, Y. Ma, C. Lee, and K.-W. Ang, "First demonstration of waveguide-integrated black phosphorus electro-optic modulator for mid-infrared beyond 4 um," 65th IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 7-11, 2019.

  3. [Invited Talk] L. Wang, Y.-W. Zhang, D. Chi, and K.-W. Ang, "Artificial synapses based on 2D materials for neuromorphic computing," 2019 International Conference on Solid State Devices and Materials, Aichi, Japan, Sep. 2-5, 2019.

  4. L. Chen, L. Wang, Y. Peng, X. Feng, S. Sarkar, S. Li, B. Li, L. Liu, J. Chen, Y. Liu, G. Han, and K.-W. Ang, "High performance three-terminal synaptic transistor based on ferroelectric HfZrO/tungsten disulfide for neuromorphic computing," 2019 International Conference on Solid State Devices and Materials, Aichi, Japan, Sep. 2-5, 2019.

  5. [Best Demo Paper Award] X. Feng, Y. Li, L. Wang, Z. G. Yu, S. Chen, W. C. Tan, N. Macadam, G. Hu, X. Gong, T. Hasan, Y.-W. Zhang, A. V.-Y. Thean, and K.-W. Ang, "First demonstration of a fully-printed MoS2 RRAM on flexible substrate with ultra-low switching voltage and its application as electronic synapse," 2019 Symposium on VLSI Technology, Kyoto, Japan, Jun. 9-14, 2019.

  6. [Keynote Talk] K.-W. Ang, "Emergence of black phosphorus as an anisotropic 2D material for electronics and optoelectronics," International Conference on Graphene and 2D Materials - Graphene Korea 2019, Incheon-Seoul, Korea, Mar. 27-29, 2019.

​

2018​

  1. L. Wang, L. Wang, K.-W. Ang, A. V.-Y. Thean, and G. Liang, "A surface potential- and physics-based compact model for 2D polycrystalline-MoS2 FET with resistive switching behavior in neuromorphic computing," 64th IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 1-5, 2018.

  2. [Invited Talk] L. Wang, C. Chi, and K.-W. Ang, "Electronic synapses based on monolayer MoS2 memtransistors for neuromorphic computing," 8th MRS-S Conference on Advanced Materials, Singapore, Nov. 21-23, 2018.

  3. [Invited Talk] K.-W. Ang, and X. Feng, "Anisotropic black phosphorus nanoribbons field-effect transistor for high performance nanoelectronics," 5th International Conference on Electronic Materials and Nanotechnology for Green Environment, Jeju, Korea, Nov. 11-14, 2018.

  4. L. Chen, S. Li, X. Feng, L. Wang, X. Huang, Benjamin C.-K. Tee, and K.-W. Ang, "High performance monolithic complementary integrated circuits based on 2D black phosphorus/HfO2 heterostructure," 2018 International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 9-13, 2018.

  5. L.Wang, L. Huang, W. C. Tan, X. Feng, L. Chen, and K.-W. Ang, "Multifunctional black phosphorus lateral heterojunction for optoelectronics," 2018 International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 9-13, 2018.

  6. X. Feng, X. Huang, L. Chen, L. Wang, and K.-W. Ang, "High mobility anisotropic black phosphorus nanoribbons field-effect transistor: Impact of crystal orientation, dimension scaling and hydrogen anneal," 2018 International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 9-13, 2018.

  7. [Invited Talk] K.-W. Ang, L. Huang, B. Dong, and C. Lee, "Mid-infrared tunable black phosphorus phototransistor for on-chip sensing applications," 256th ACS National Meeting, Boston, Massachusetts, USA, Aug. 19-23, 2018.

  8. L. Huang, B. Dong, X. Guo, Y. Chang, N. Chen, X. Huang, H. Wang, C. Lee, and K.-W. Ang, "Integration of 2D black phosphorus phototransistor and silicon photonics waveguide system towards mid-infrared on-chip sensing applications," 2018 Symposium on VLSI Technology, Honolulu, USA, Jun. 18-22, 2018.

  9. Y. Li, A. Alian, L. Huang, K.-W. Ang, D. Lin, D. Mocuta, N. Collaert, and A. V.-Y. Thean, "A near- & short-wave IR tunable InGaAs nanomembrane photoFET on flexible substrate for lightweight and wide-angle imaging applications," 2018 Symposium on VLSI Technology, Honolulu, USA, Jun. 18-22, 2018.

  10. [Invited Talk] K.-W. Ang, and W. C. Tan, "Black phosphorus carbide: A new 2D material with high hole mobility and wide absorption spectrum," 13th International Conference on Nano/Micro Engineered and Molecular Systems, Singapore, Apr. 22-26, 2018.

​

2017

  1. W. C. Tan, L. Huang, R. J. Ng, L. Wang, and K.-W. Ang, "Black phosphorus carbide phototransistor with wide spectrum sensing for IoT applications," 63rd IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2-6, 2017.

  2. L. Wang, Y. Li, X. Feng, K.-W. Ang, X. Gong, A. Thean, and G. Liang, "A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration," 63rd IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2-6, 2017.

  3. L. Huang, W. C. Tan, L. Wang, C. Lee, K.-W. Ang, "Infrared black phosphorus phototransistor with electrostatically tunable responsivity," 2017 International Conference on Solid State Devices and Materials, Sendai, Japan, Sep. 19-22, 2017.

  4. [Invited Talk] K.-W. Ang, "Black phosphorus based electronic and optoelectronic devices," 9th Annual Recent Progress in Graphene & 2D Materials Research (RPGR) Conference, Singapore, Sep. 19-22, 2017.

  5. U. Younis, X. Luo, B. Dong, L. Huang, E.-J. Lim, G.-Q. Lo, A. Bettiol, K.-W. Ang, "Mid-IR waveguides in SOI platform," Pacific Rim Conference on Lasers and Electro-Optics (CLEO-PR), Singapore Jul. 31-Aug. 4, 2017.

  6. Y. Liu, Y. Cai, G. Zhang, Y. W. Zhang, and K.-W. Ang, "High Performance Photovoltaic Based on Black Phosphorus p-n Homojunction Diode," Materials Research Society (MRS) Spring Meeting, Arizona, USA, Apr. 17-21, 2017.

  7. X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang, "Adatoms Doping Effects on the Thermal Stability of Black Phosphorus formed on High-k Gate Dielectric," Materials Research Society (MRS) Spring Meeting, Arizona, USA, Apr. 17-21, 2017.

​​

2016

  1. [Invited Talk] K.-W. Ang, "Black phosphorus transistor with enhanced carrier transport properties," 9th Singapore International Chemistry Conference, Singapore, Dec. 11-14, 2016.

  2. R. Yang, J. Chai, S. Wang, D. Chi, and K.-W. Ang, "Thickness-dependent flatband voltage shift in MOSCAP with MoS2 and high-k gate dielectric," 2016 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sep. 26-29, 2016.

  3. P. Xia, S. Wang, D. Chi, C. Li, Z. He, X. Liu, and K.-W. Ang, "The physical origin of interface states and its influence on MOSCAP with magnetron sputtered MoS2 and HfO2 high-k gate dielectric," 2016 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sep. 26-29, 2016.

  4. [Invited Talk] K.-W. Ang, "Boosting black phosphorus transistor performance through interface engineering," 8th International Conference on Low Dimensional Structures and Devices, Mayan Riviera, Mexico, Aug. 28-Sep. 2, 2016.

  5. U. Younis, A. E.-J. Lim, P. G.-Q. Lo, A. A. Bettiol, and K.-W. Ang, "Improving propagation loss of Ge-on-SOI mid-infrared waveguides using rapid thermal annealing," 13th International Conference on Group-IV Photonics, Shanghai, China, Aug. 24-26, 2016.

  6. U. Younis, A. A. Bettiol, and K.-W. Ang "Mid-infrared waveguides in Ge-on-SOI," IEEE Optical MEMS and Nanophotonics Conference, Singapore, Jul. 31-Aug. 4, 2016.

  7. Z.-P. Ling, X. Feng, H. Jiang, Z. He, X. Liu, and K.-W. Ang, "Black phosphorus transistors with enhanced hole transport and subthreshold swing using ultra-thin HfO2 high-k gate dielectric," IEEE Silicon Nanoelectronics Workshop, Honolulu, USA, Jun. 12-13, 2016.

  8. U. Younis, S. Vanga, A. Bettiol, and K.-W. Ang, "Towards low-loss mid-infrared waveguides in Ge-on-SOI," Conference on Lasers and Electro-Optics (CLEO), San Jose, USA, Jun. 5-10, 2016.

  9. Z.-P. Ling, K. Majumdar, S. Sarkar, S. Mathew, J.-T. Zhu, K. Gopinadhan, T. Venkatesan, and K.-W. Ang, "Nickel-phosphide contact for effective Schottky barrier modulation in black phosphorus p-channel transistors," 2016 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 25-27, 2016.

  10. [Invited Talk] K.-W. Ang, and X. Liu, "Two-dimensional materials and devices for ubiquitous electronic applications," 2nd Annual World Congress of Smart Materials - 2016 (WCSM 2016), Singapore, Mar. 4-6, 2016.

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2015

  1. [Invited Talk] K.-W. Ang, and X. Liu, "2D layered semiconductor for next generation nanoelectronics applications," 2015 Energy Materials Nanotechnology (EMN) Fall Meeting, Las Vegas, USA, Nov. 16-19, 2015.

  2. Z.-P. Ling, R. Yang, J.-W. Chai, S.-J. Wang, Y. Tong, D. Lei, Q. Zhou, X. Gong, D.-Z. Chi, and K.-W. Ang, "Ultra-sensitive 2D photodetectors based on large scale molybdenum disulfide crystals," 2015 International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, Sep. 27-30, 2015.

  3. [Invited Talk] K.-W. Ang, Z.-P. Ling, and J. Zhu, "Next generation field-effect transistors based on 2D black phosphorus crystal," 2015 IEEE International Conference on Digital Signal Processing, Singapore, Jul. 21-24, 2015.

  4. [Invited Talk] K.-W. Ang, "Strain and Contact Engineering for Ultra-Thin Body and Multi-Gate Transistors with Silicon-Carbon Source/Drain Stressors," 9th International Conference on Silicon Epitaxy and Heterostructures, Montreal, Canada, May 17-22, 2015.

  5. [Invited Talk] Z.-P. Ling, R. Yang, J.-W. Chai, S.-J. Wang, Y. Tong, Q. Zhou, X. Gong, D.-Z. Chi, and K.-W. Ang, "Prospect of large scale 2D transition metal dichalcogenides nanophotonics for optical communication," The 3rd IEEE MTT-S International Wireless Symposium, Shenzhen, China, Mar. 30-Apr. 1, 2015.

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2014 & Before

  1. J. F. Song, X. S. Luo, J. S. Kee, Q. Liu, K. W. Kim, Y. Shin, M. K. Park, K.-W. Ang, and G. Q. Lo, "A Novel Optical Multiplexed, Label-Free Bio-Photonic-Sensor Realized on CMOS-Compatible Optoelectronic Integrated Circuit (OEIC) Platform," IEEE International Electron Devices Meeting (IEDM), Dec. 2013, pp. 381-384.

  2. [Invited Talk] K.-W. Ang*, Z. Fang, X. P. Wang, G.-Q. Lo, and D.-L. Kwong “1T-1R architecture with fully CMOS-compatible RRAM cell to realize 4F2 footprint for high density nonvolatile memory application,” 2013 MRS Spring Meeting, Apr. 2013.   *Presenting author.

  3. K.-W. Ang, K. Majumdar, K. Matthews, C. D. Young, C. Kenney, C. Hobbs, P. D. Kirsch, R. Jammy, "Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement," IEEE International Electron Devices Meeting (IEDM), Dec. 2012, pp. 439-442.

  4. [Invited Talk] C. D. Young, K. Akarvardar, K. Matthews, M. O. Baykan, J. Pater, I. Ok, T. Ngai, K.-W. Ang, M. Minakais, G. Bersuker, "Electrical Characterization and Reliability Assessment of Double-gate FinFETs," The Electrochemical Society Meeting (ECS), 2012, p. 2597.

  5. [Invited Talk] C. Hobbs, K.-W. Ang, R. Hill, C. Y. Kang, W. Y. Loh, K. Hummler, S. Arkalgud, P. Kirsch, R. Jammy, "More Moore or More than Moore," The Electrochemical Society Meeting (ECS), 2012, p. 2782.

  6. [Invited Talk] C. Hobbs, K.-W. Ang, R. Hill, I. Ok, B.-G. Min, D. Franca, H. Stamper, S. Vivekanand, M. Rodgers, S. Gausepohl, P. Kirsch, R. Jammy, "Non Planar Non Si CMOS-Challenges and Opportunities," The Electrochemical Society Meeting (ECS), 2012, p. 3186.

  7. C. Hobbs, R. Hill, D. Gilmer, T. Kim, S. Koveshnikov, W.-Y. Loh, M.-G. Sung, K. Young-Fisher, P. Y. Hung, J. Huang, R. Lee, M. H. Wong, A. Wang, B. G. Min, C. Huffman, G. Bersuker, K.-W. Ang, C. Y. Kang, P. Kirsch, and R. Jammy, “Advanced and Emerging Devices: SEMATECH’s Perspective,” SEMATECH Symposium, Tokyo, Japan, Jun. 2012.

  8. C. R. Kenney, K.-W. Ang, K. Matthews, M. Liehr, M. Minakais, J. Pater, M. Rodgers, V. Kaushik, S. Novak, S. Gausepohl, C. Hobbs, P. Kirsch, and R. Jammy, "FinFET parasitic resistance reduction by segregating shallow Sb, Ge and As implants at the silicide interface," Symposium on VLSI Technology, Jun. 2012, pp. 17-18.

  9. [Invited Talk] I. Ok, K.-W. Ang*, C. Hobbs, R. H. Baek, C. Y. Kang, J. Snow, P. Nunan, S. Nadahara, P. D. Kirsch, R. Jammy, "Conformal, low-damage shallow junction technology (Xj~5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node," 12th International Workshop on Junction Technology (IWJT), May 2012, pp. 29-34.   *Presenting author.

  10. [Invited Talk] C. Kang, K.-W. Ang, R. Hill, W. Y. Loh, J. Oh, R. Lee, D. Gilmer, G. Bersuker, C. Hobbs, P. Kirsch, and R. Jammy, "Emerging CMOS and beyond CMOS technologies for an ultra-low power 3D world," 2012 IEEE International Conference IC Design & Technology (ICICDT), Apr. 2012.

  11. C. D. Young, G. Bersuker, M. Jo, K. Matthews, J. Huang, S. Deora, K.-W. Ang, T. Ngai, C. Hobbs, P. D. Kirsch, "New insights into SILC-based life time extraction," International Reliability Physics Symposium, Apr. 2012.

  12. S. Deora, G. Bersuker, C. D. Young, J. Huang, K. Matthews, K.-W. Ang, T. Ngai, C. Hobbs, P. D. Kirsch, R. Jammy, "PBTI improvement in gate last HfO2 gate dielectric nMOSFET due to Zr incorporation," International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Apr. 2012.

  13. M. Jo, C. Y. Kang, K.-W. Ang, J. Huang, P. Kirsch, R. Jammy, "Understanding and improving SILC behavior under TDDB stress in full gate-last high-k/metal gate nMOSFETs," International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Apr. 2012.

  14. K. Akarvardar, C. D. Young, D. Veksler, K.-W. Ang, I. Ok, M. Rodgers, V. Kaushik, S. Novak, J. Nadeau, M. Baykan, C. Hobbs, "Performance and variability in multi-VT FinFETs using fin doping," International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Apr. 2012.

  15. [Invited Talk] P. D. Kirsch, R. J. W. Hill, J. Huang, W. Y. Loh, T.-W. Kim, M. H. Wong, B. G. Min, C. Huffman, D. Veksler, C. D. Young, K.-W. Ang, C. Hobbs and R. Jammy "Challenges of III–V materials in advanced CMOS logic," International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Apr. 2012.

  16. K. Akarvardar, M. Rodgers, V. Kaushik, C. S. Johnson, I. Ok, K.-W. Ang, H. Stamper, S. Bennett, D. Franca, M. Rao, "Impact of thermal budget on dopant-segregated (DS) metal S/D gate-all-around (GAA) PFETs," International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Apr. 2012.

  17. T. Ngai, C. Hobbs, D. Veksler, K. Matthews, I. Ok, K. Akarvardar, K.-W. Ang, J. Huang, M. P. Rodgers, S. Vivekanand, "Simple FinFET gate doping technique for dipole-engineered Vt tuning and CET scaling," International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Apr. 2012.

  18. [Invited Talk] K.-W. Ang, J. Barnett, J. Huang, P. Y. Hung, R. H. Baek, C. Y. Kang, B.-G. Min, J. H. Yum, M. Rodgers*, V. Kaushik*, S. Novak*, S. Gausepohl*, P. Nunan, J. Snow, S. Nadahara, C. Hobbs, P. D. Kirsch, and R. Jammy, “Molecular Monolayer Doping (MLD) Technology for FinFET Ultra-Shallow Junction Application,” Surface Preparation and Cleaning Conference, Austin, TX USA, Mar. 2012.

  19. [Invited Talk] C. D. Young, K. Akarvardar, G. Bersuker, I. Ok, T. Ngai, K.-W. Ang, C. Hobbs, P. Kirsch, R. Jammy, "Performance and reliability investigation of (110) and (100) sidewall oriented MugFETs," International Semiconductor Device Research Symposium (ISDRS), Feb. 2012.

  20. [Invited Talk] K.-W. Ang, B.-G. Min, M. Gunji, P. Y. Hung, I. Ok, M. Rodgers, D. L. Franca, S. Gausepohl, C. Hobbs, P. D. Kirsch, and R. Jammy, "Advanced contact and junction technologies for improved parasitic resistance and short channel immunity in FinFETs beyond 22nm node," International Semiconductor Device Research Symposium (ISDRS), Feb. 2012.

  21. K.-W. Ang, J. Barnett, W.-Y. Loh, J. Huang, B.-G. Min, P. Y. Hung, I. Ok, J. H. Yum, G. Bersuker, M. Rodgers, P. Kirsch and R. Jammy, "300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj~5nm) formed with molecular monolayer doping technique," IEEE International Electron Devices Meeting (IEDM), Dec. 2011.

  22. K.-W. Ang, B.-G. Min, R. Hill, I. Ok, D. Franca, H. Stamper, S. Vivekanand, M. Rodgers, S. Gausepohl, C. Hobbs, P. Kirsch, R. Jammy, “Non-Planar Outlook & Module Development for High-Mobility III-V/Ge Channel,” SEMATECH Symposium, Hsinchu, Taiwan, Sep. 13, 2011.

  23. [Invited Talk] F.-F. Ren, K.-W. Ang, M. Yu, G.-Q. Lo, Y. Shi, "Photoresponse enhancement in nanoscale Ge photodetector through split bull's eye shaped plasmonic antenna," Quantum Electronics Conference & Lasers and Electro-Optics, Aug-Sep. 2011, pp. 655-657.

  24. [Invited Talk] T.-Y. Liow, K.-W. Ang, Q. Fang, M. B. Yu, F. F. Ren, S. Y. Zhu, J. Zhang, J. W. Ng, J. F. Song, Y. Z. Xiong, G. Q. Lo, and D.-L. Kwong, "Silicon photonics for monolithic electronic-photonic integrated circuit applications: Opportunities and challenges," 16th OptoeElectronics and Communications Conference (OECC), Jul. 2011, pp. 837-839.

  25. K.-W. Ang, B.-G. Min, P.Y. Hung, I. Ok, D. Franca, H. Stamper, S. Vivekanand, M. Rodgers, S. Gausepohl, C. Hobbs, P. Kirsch, R. Jammy, “Towards 3D CMOS Scaling,” SEMATECH Symposium, Kyoto, Japan, Jun. 2011.

  26. [Invited Talk] I. Ok, W. Y. Loh, K.-W. Ang, C. D. Young, P. Y. Hung, T. Ngai, K. Akarvardar, C. Hobbs, R. Jammy, "Parasitic resistance reduction technology," 11th International Workshop on Junction Technology (IWJT), Jun. 2011, pp. 50-54.

  27. K.-W. Ang, P. Y. Hung, T. Ngai, Y.-R. Yang, S. Vivekanand, J. Nadeau, C. Deeb, D. L. Franca, M. Rao, J. Piccirillo, S. Gausepohl, C. Hobbs, P. D. Kirsch, and R. Jammy, “High Mobility Strained-SiGe Channel P-FET: Impact of SiGe Thickness Scaling on Drivability, Band Structure, Parasitic Resistance and Vth Tunability,” 2011 Si Nanoelectronics Workshop, Jun. 2011.

  28. [Plenary Talk] G.-Q. Lo, K.-W. Ang, T. Y. Liow, Q. Fang, J. Zhang, S. Y. Zhu, J. F. Song, Y. Z. Xiong, F. F. Ren, M. Yu, "Silicon Photonics Technologies for Monolithic Electronic-Photonic Integrated Circuit," The Electrochemical Society Meeting (ECS), p. 914, 2010.

  29. Q. Fang, T.-Y. Liow, J. F. Song, K.-W. Ang, Y. T. Phang, M. B. Yu, G. Q. Lo, and D.-L. Kwong, "Monolithic Silicon Photonic DWDM Receiver for Terabit Data Communications," Optical Fiber Communication Conference, Mar. 2010.

  30. X. T. Chen, B. Wang, J. Chandrappan, W. Y. Tian, K.-W. Ang, J. Reboud, M. K. Je, R. M. Kumarasamy, P. Lo, "Integration of photonic sensor array with GeSi photo-detectors for multiplexing detection," Photonics Global Conference (PGC), Feb. 2010.

  31. Q. Fang, T.-Y. Liow, K.-W. Ang, Y. T. Phang, M. B. Yu, G. Q. Lo, and D.-L. Kwong, "Carrier depletion based silicon optical modulators," Proceedings of SPIE, 2010.

  32. K.-W. Ang, T.-Y. Liow, M.-B. Yu, Q. Fang, J. Song, G. Q. Lo, and D.-L. Kwong, "Monolithically fabricated germanium-on-SOI photodetector and Si CMOS circuit for integrated photonic applications," Proceedings of SPIE, 2010.​

  33. A. E. J. Lim, K.-W. Ang, Q. Fang, T.-Y. Liow, M. Yu, G.-Q. Lo, D.-L. Kwong, "Design and fabrication of a novel evanescent germanium electro-absorption (EA) modulator," Proceedings of SPIE, 2010.

  34. Q. Fang, T.-Y. Liow, K.-W. Ang, Y. T. Phang, M. B. Yu, G. Q. Lo, D.-L. Kwong, "320 Gbps monolithic silicon photonic DWDM receiver," Proceedings of SPIE, 2010.

  35. T.-Y. Liow, K.-W. Ang, Q. Fang, J. Song, Y.-Z. Xiong, M. Yu, G.-Q. Lo, and D.-L. Kwong, "Monolithic integration and optimization of waveguide silicon modulators and germanium photodetectors," Proceedings of SPIE, 2010.

  36. F.-F. Ren, K.-W. Ang, G.-Q. Lo, D.-L. Kwong, "Nanometer germanium photodetector with aluminum surface plasmon antenna for enhanced photo-response," Proceedings of SPIE, 2010.

  37. K.-W. Ang, J. W. Ng, A. E.-J. Lim, M.-B. Yu, G.-Q. Lo, D.-L. Kwong, "Waveguide-integrated Ge/Si avalanche photodetector with 105GHz gain-bandwidth product," Optical Fiber Communication Conference, Mar-Apr. 2010.

  38. [Invited Talk] K.-W. Ang, T.-Y. Liow, Q. Fang, M. B. Yu, F. F. Ren, S. Y. Zhu, J. Zhang, J. W. Ng, J. F. Song, Y. Z. Xiong, G.-Q. Lo and D.-L. Kwong, "Silicon photonics technologies for monolithic electronic-photonic integrated circuit (EPIC) applications: Current progress and future outlook," IEEE International Electron Devices Meeting (IEDM), Dec. 2009, pp. 569-572.

  39. X. Wang, L. Chen, W. Chen, H. Cui, Y. Hu, P. Cai, R. Yang, C.-Y. Hong, D. Pan, K.-W. Ang, G. Q. Lo, "80 GHz bandwidth-gain-product Ge/Si avalanche photodetector by selective Ge growth," Optical Fiber Communication Conference, Mar. 2009.

  40. [Invited Talk] G. Q. Lo, K.-W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. F. Song, Y. Z. Xiong, S. H. Tao, S. Y. Zhu, F. F. Ren, and D. L. Kwong, “Silicon-Photonics R/D Activities and MPW Services in IME/Singapore,” International Conference on Silicon Photonics, Nov. 2008.

  41. [Invited Talk] G.-Q. Lo, K.-W. Ang, and D.-L. Kwong, “Novel Metal-Germanide Contact Technology,” 214th Electrochemical Society Meeting, Oct. 2008.

  42. F. Liu, H.-S. Wong, K.-W. Ang, M. Zhu, X. Wang, D. M.-Y. Lai, P.-C. Lim, B. L. H. Tan, S. Tripathy, S.-A. Oh, G. S. Samudra, N. Balasubramanian, and Y.-C. Yeo, "A new source/drain Germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancement," Symposium on VLSI Technology, Jun. 2008, pp. 26-27.

  43. H.-S. Wong, F.-Y. Liu, K.-W. Ang, S.-M. Koh, A. T.-Y. Koh, T.-Y. Liow, R. T.-P. Lee, A. E-J. Lim, W.-W. Fang, M. Zhu, L. Chan, N. Balasubramaniam, G. Samudra, and Y.-C. Yeo, "Selenium co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on silicon-carbon (Si:C) source/drain stressors," Symposium on VLSI Technology, Jun. 2008, pp. 168-169.

  44. K.-W. Ang, H.-S. Wong, N. Balasubramanian, G. Samudra, and Y.-C. Yeo, "Enhanced Performance in Strained n-FET with Double-Recessed Si:C Source/Drain and Lattice-Mismatched SiGe Strain-Transfer Structure (STS)," International Semiconductor Device Research Symposium, Dec. 2007.

  45. H.-S. Wong, K.-W. Ang, L. Chan, K.-M. Hoe, C.-H. Tung, N.Balasubramaniam, D. Weeks, T. Landin, J. Spear, S. G. Thomas, G. Samudra, and Y.-C. Yeo, "Source/Drain-Extension-Last Process for Incorporating In Situ Doped Lattice-Mismatched Extension Stressor for Enhanced Performance in SOI N-FET," International Semiconductor Device Research Symposium, Dec. 12-14, 2007.

  46. S. L. Tan, K.-W. Ang, K. H. Toh, D. Isakov, C. M. Chua, L. S. Koh, Y.-C. Yeo, D. S. H. Chan, J. C. H. Phang, "Near-IR photon emission spectroscopy on strained and unstrained 60 nm silicon nMOSFETs," 33rd International Symposium for Testing and Failure Analysis (ISTFA), Nov. 2007.

  47. Y.-C. Yeo, K.-W. Ang, J. Lin, C.-S. Lam, "Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressor," Materials Research Society Spring Meeting, Apr. 2007.

  48. R. T.-P. Lee, L. Yang, K.-W. Ang, T.-Y. Liow, K.-M. Tan, A. S.-W. Wong, G. S. Samudra, D. Z. Chi, and Y.-C. Yeo, "Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressors," Materials Research Society Spring 2007 Meeting, Apr. 2007.

  49. K.-W. Ang, K.-J. Chui, C.-H. Tung, G. Samudra, N. Balasubramanian, and Y.-C. Yeo, "Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors," International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Apr. 2007, pp. 138-139.

  50. K.-W. Ang, C. Wan, K.-J. Chui, C.-H. Tung, N. Balasubramanian, M.-F. Li, G. S. Samudra, and Y.-C. Yeo, "Hot carrier reliability of strained N-MOSFET with lattice-mismatched source/drain stressors," Proc. 45th Annual International Reliability Physics Symposium, Apr. 2007.

  51. K.-W. Ang, J. Lin, C.-H. Tung, N. Balasubramanian, G. Samudra, and Y.-C. Yeo, "Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs," Symposium on VLSI Technology, Jun. 2007, pp. 42-43.

  52. K.-J. Chui, K.-W. Ang, A. Madan, A. Du, C.-H. Tung, N. Balasubramanian, G. Samudra, and Y.-C. Yeo, "Ultra-thin-body P-MOSFET featuring silicon-germanium source/drain stressors with high germanium content formed by local condensation," 36th European Solid-State Device Research Conference (ESSDERC), Sep. 2006, pp. 85-88.

  53. K.-W. Ang, H.-C. Chin, K.-J. Chui, M.-F. Li, G. Samudra, and Y.-C. Yeo, "Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions," 36th European Solid-State Device Research Conference (ESSDERC), Sep. 2006, pp. 89-92.

  54. G. H. Wang, E.-H. Toh, K.-W. Ang, C.-H. Tung, A. Du, Y.-L. Foo, G.-Q. Lo, G. Samudra, and Y.-C. Yeo, "Strained SiGe-On-Insulator N-MOSFET with Silicon Source/Drain for Drive Current Enhancement," International Conference on Solid State Devices and Materials, Sep. 2006, pp. 1048-1049.

  55. K.-W. Ang, K.-J. Chui, H.-C. Chin, Y.-L. Foo, A. Du, W. Deng, M.-F. Li, G. Samudra, N. Balasubramanian, and Y.-C. Yeo, "50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: silicon-carbon source/drain regions and tensile stress silicon nitride liner," Symposium on VLSI Technology, Jun. 2006, pp. 80-81.

  56. R. T. P. Lee, T.-Y. Liow, K.-M. Tan, K.-W. Ang, K.-J. Chui, G.-Q. Lo, D.-Z. Chi, and Y.-C. Yeo, "Process-Induced Strained P-MOSFET Featuring Nickel-Platinum Silicided Source/Drain," Materials Research Society Symposium Proceedings, Apr. 2006.

  57. K.-J. Chui, K.-W. Ang, A. Madan, G. H. Wang, C.-H. Tung, L.-Y. Wong, Y. Wang, S.-F. Choy, N. Balasubramanian, M. F. Li, G. Samudra, and Y.-C. Yeo, "Source/drain germanium condensation for p-channel strained ultra-thin body transistors," IEEE International Electron Devices Meeting (IEDM), Dec. 2005, pp. 499-502.

  58. K.-W. Ang, K.-J. Chui, V. Bliznetsov, Y. Wang, L.-Y. Wong, C.-H. Tung, N. Balasubramanian, M. F. Li, G. Samudra, and Y.-C. Yeo, "Thin body silicon-on-insulator n-MOSFET with silicon-carbon source/drain regions for performance enhancement," IEEE International Electron Devices Meeting (IEDM), Dec. 2005, pp. 503-506.

  59. [IEDM Late News] K. W. Ang, K. J. Chui, V. Bliznetsov, A. Du, N. Balasubramanian, M. F. Li, G. Samudra, Y.-C. Yeo, “Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions,” IEEE International Electron Devices Meeting (IEDM), Dec. 2004, pp. 1069-1071.

  60. K.-W. Ang, Y. T. Hou, J. Singh, M. F. Li, Y.-C. Yeo, “Theoretical Investigation of Electrical Performance and Band Structure of P-MOSFETs with SiGe Source/Drain Stressors,” International Conference on Solid-State Devices and Materials, Sep. 2004, pp. 722-723.

​

​

Short Course, Colloquium

​

  1. [Invited Colloquium] K.-W. Ang, "In-memory computing using memristors with transition metal dichalcogenides", CROUCHER ASI Workshop, Hong Kong, August 24, 2021.

  2. [Invited Colloquium] K.-W. Ang, "Rediscovering black phosphorus layered material for electronic and optoelectronic device applications", 3rd Japan Science and Technology Agency, CREST/2D Workshop, Singapore, March 15, 2019.

  3. [Invited Short Course] K.-W. Ang, "Doping and contact technology in advanced CMOS", 1st IEEE Electron Devices Technology and Manufacturing (EDTM), Toyama, Japan, February 28-March 2, 2017.

  4. [Invited Colloquium] K.-W. Ang, "Interface engineering for few-layer phosphorene based electronic devices", 2016 ZEISS Technology Symposia Series on "Semiconductor Technology Imaging & Analysis: Challenges and Opportunities", Singapore, July 22, 2016.

  5. [Invited Colloquium] K.-W. Ang, “Advanced Contact and Junction Technology for FinFETs Beyond the 22nm Node,” 35th IEEE Annual Electron Devices Society Activities in Western New York Conference, NY, USA, Nov. 2011.  

  6. [Invited Colloquium] K.-W. Ang, “Si Photonics Technology for High Bandwidth Optical Interconnects,” New York Center for Advanced Interconnect Science and Technology Fall Review Seminar, Albany, NY USA, Oct. 2011.

​

​

U.S. Patents

​

  1. U.S. Patent App. 17/521,347, "A Self-Selective Multi-Terminal Memtransistor For Crossbar Array Circuits," Xuewei Feng, Kah-Wee Ang, File Date: Nov. 8, 2021. [Link]

  2. U.S. Patent App. 16/598,167, "Isotropic silicon nitride removal," Mikhail Korolik, Paul E Gee, Bhaskar Jyoti Bhuyan, John Sudijono, Doreen Wei Ying Yong, Kah Wee Ang, Debanjan Jana, Niharendu Mahapatra, File Date: Apr. 15, 2021. [Link]

  3. U.S. Patent App. 11,282,972, "Crystalline material, phototransistor, and methods of fabrication thereof," Wee Chong Tan, Kah-Wee Ang, Issue Date: Mar. 22, 2022. [Link]

  4. SG Patent App. 10,202,111,860W, "A Self-Selective Multi-Terminal Memtransistor For Crossbar Array Circuits," Xuewei Feng, Kah-Wee Ang, File Date: Nov. 10, 2020.

  5. International Pattent App. PCT/SG2020/050528, "An AI Sensing Device for a Broad Spectrum of Gas and Vapor Detection," Wee Chong Tan, Kah-Wee Ang, File Date: Sep. 16, 2020.

  6. U.S. Patent App. 62/590,386, "Black phosphorus carbide phototransistor via carbon doping of black phosphorus and methods for fabricating the same," W. C. Tan, K. W. Ang, File Date: Nov. 24, 2017.

  7. U.S. Patent No. 9,213,137, "Semiconductor devices including photodetectors integrated on waveguides and methods for fabricating the same," P. R. Verma, K. W. Ang, Issue Date: Dec. 15, 2015. [Link]

  8. U.S. Patent No. 9,134,553, "Optical modulator and methods for manufacturing the same," E.-J. Andy Lim, K. W. Ang, Q. Fang, T.-Y. Jason Liow, M. Yu, G.-Q. Patrick Lo, Issue Date: Sep. 15, 2015. [Link]

  9. U.S. Patent No. 9,048,371, "Semiconductor devices including avalanche photodetectors integrated on waveguides and methods for fabricating the same," K.-W. Ang, P. R. Verma, Issue Date: Jun. 2, 2015. [Link]

  10. U.S. Patent No. 8,802,484, "Integration of germanium photodetector in CMOS processing," P. R. Verma, G. Zhang, K.-W. Ang, Issue Date: Aug. 12, 2014. [Link]

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Ph.D. Theses

 

  1. Li Huang, "Development of black phosphorus photodetectors and electro-optic modulators for mid-infrared," 2019.

  2. Xuewei Feng, "Two-dimensional material platform for logic and memristive device applications," 2019.

  3. Li Chen, "Two-dimensional materials for internet-of-things applications: logic, memory and flexible sensor," 2020.

  4. [Best Thesis Award] Li Sifan, "Two-dimensional materials-based synaptic devices for neuromorphic/in-memory computing applications," 2022.

  5. [Best Thesis Award] Chien Yu-Chieh, "Two-dimensional semiconductor field-effect transistors for energy-efficient computing via metal contacts and ferroelectric gate stacks engineering," 2023.

  6. Minghao He, "Enhanced performance of gallium oxide devices for power applications," 2023..E

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